Thermochemistry and Kinetics of Silicon Hydride Cluster Formation during Thermal Decomposition of Silane
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منابع مشابه
Thermochemistry and Kinetics of Silicon Hydride Cluster Formation during Thermal Decomposition of Silane
Product contamination by particles nucleated within the processing environment often limits the deposition rate during chemical vapor deposition processes. A fundamental understanding of how these particles nucleate could allow higher growth rates while minimizing particle contamination. Here we present an extensive chemical kinetic mechanism for silicon hydride cluster formation during silane ...
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abstract: mineral scaling in oil and gas production equipment is one of the most important problem that occurs while water injection and it has been recognized to be a major operational problem. the incompatibility between injected and formation waters may result in inorganic scale precipitation in the equipment and reservoir and then reduction of oil production rate and water injection rate. ...
Kinetics of Thermal Decomposition Of Aluminum Hydride In Argon
Thermogravimetric analysis was utilized to investigate the decomposition kinetics of alane (AlH3) in argon atmosphere and to shed light on the mechanism of alane decomposition. Two kinetic models have been successfully developed and used to propose a mechanism for the complete decomposition of alane and to predict its shelf-life during storage. Under non-isothermal heating, alane decomposes in ...
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the main purpose of this research was to:1.develop a coking model for thermal cracking of naphtha.2.study coke inhibition methods using different coke inhibitors.developing a coking model in naphtha cracking reactors requires a suitable model of the thermal cracking reactor based on a reliable kinetic model.to obtain reliable results all these models shall be solved simultaneously.for this pu...
15 صفحه اولModeling the Nucleation Kinetics and Aerosol Dynamics of Particle Formation during Cvd of Silicon from Silane
Product contamination by gas-phase nucleation within the processing environment often limits the deposition rate that can be obtained during chemical vapor deposition (CVD) of materials for microelectronics applications. A fundamental understanding of how these particles nucleate and grow may allow us to enlarge the process envelope, providing higher growth rates without particle contamination....
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ژورنال
عنوان ژورنال: The Journal of Physical Chemistry B
سال: 1999
ISSN: 1520-6106,1520-5207
DOI: 10.1021/jp983358e